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RJK1021DPE
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1630-0100 Rev.1.00 Apr 03, 2008
Features
* VDSS : 100 V * RDS(on) : 20 m (Max) * ID : 70 A
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4 1. Gate 2. Drain 3. Source 4. Drain
2, 4 D
1
1G 2 3
S 3
Application
* Motor control, Lighting control, Solenoid control, DC-DC converter, etc.
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25C 2. STch = 25C, Tch 150C, L = 100 H Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) IAP Note2 Pch Note1 ch-c Tch Tstg Ratings 100 20 70 140 70 140 35 100 1.25 150 -55 to +150 Unit V V A A A A A W C/W C C
REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Page 1 of 6
RJK1021DPE
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- 3.0 0.56 16 2600 430 160 30 70 110 65 0.9 80 Max -- 100 0.1 4.0 0.70 20 -- -- -- -- -- -- -- 1.5 -- Unit V A A V V m pF pF pF ns ns ns ns V ns Test conditions ID = 1 mA, VGS = 0 VDS = 100 V, VGS = 0 VGS = 20 V, VDS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 35 A, VGS = 10 V Note3 ID = 35 A, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V ID = 35 A VGS = 10 V RG = 25 IF = 35 A, VGS = 0 IF = 70 A, VGS = 0 diF/dt = 100 A/s
REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Page 2 of 6
RJK1021DPE
Main Characteristics
Power vs. Temperature Derating
120 1000
Maximum Safe Operation Area
Ta = 25C
10
10 0 s
s 1m
Channel Dissipation Pch (W)
80 60 40 20
Drain Current ID (A)
100
100
s
10
DC Operation (Tc = 25C)
1
PW = 10 ms (1shot)
0.1 Operation in this 0.01 0.1
area is limited by RDS(on)
0
50
100
150
200
1
10
100
1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100 10 V 6V 8V 100 5V
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
80
80
60
4.6 V
60
40
40 Tc = 75C 20 25C -25C
20
VGS = 4 V
Pulse Test
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V) Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) (m)
100 VGS = 10 V
Drain to Source on State Resistance vs. Gate to Source Voltage
Drain to Source on State Resistance RDS(on) (m)
35 Pulse Test 30
25
10
20 ID = 70 A 15 10 A 10 0 4 8 12 16 20 35 A
1 1 10
Pulse Test 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Page 3 of 6
RJK1021DPE
Drain to Source on State Resistance vs. Temperature
40 VGS = 10 V 30 Pulse Test
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance RDS(on) (m)
1000
100
Tc = -25C
20
ID = 50 A 10 A
35 A
10 75C 1
25C
10
0 -25
0
25
50
75
100 125 150
0.1 0.1
VDS = 10 V Pulse Test 1 10 100
Case Temperature Tc (C)
Drain Current
ID (A)
Body-Drain Diode Reverse Recovery Time
Typical Capacitance vs. Drain to Source Voltage
10000 Ciss
Reverse Recovery Time trr (ns)
100
Capacitance C (pF)
1000 Coss 100 Crss VGS = 0 f = 1 MHz 1 10 100
di / dt = -100 A / s VGS = 0, Ta = 25C 10 0.1 10 1 10 100
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
Drain to Source Voltage VDS (V)
120 VGS 80 VDS
12
Switching Time t (ns)
VDD = 25 V 50 V 80 V
ID = 70 A
Gate to Source Voltage VGS (V)
160
16
1000 VGS = 10 V, VDD = 50 V PW = 5 s, duty 1 % RG = 25 td(off) 100 tf td(on) tr 10 0.1 1 10 100
8
40 VDD = 80 V 50 V 25 V 0 24 48 72 96
4
0 120
Gate Charge Qg (nC)
Drain Current ID (A)
REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Page 4 of 6
RJK1021DPE
Reverse Drain Current vs. Source to Drain Voltage
100
Avalanche Current vs.Case Temperature
40 L = 100 H
IDR (A)
80 10 V 5V 40 VGS = 0 V, -5 V 20
Avalanche Current IAP (A)
Pulse Test
30
Reverse Drain Current
60
20
10
0
0.4
0.8
1.2
1.6
2.0
0 25
50
75
100 125 150 175 200
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10.0
3
1
D=1 0.5
0.3
0.2
0.1 5
0.0
0.02
0.0 1
u tp lse
0.1
ch - c(t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C
PDM PW T
D=
PW T
0.03
1s
ho
0.01 100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 25 Vin 10 V VDD = 50 V td(on) Vout Monitor Vin Vout 10% 10%
Waveform
90%
10% 90% td(off) tf
90% tr
REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Page 5 of 6
RJK1021DPE
Package Dimensions
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Ordering Information
Part No. RJK1021DPE-00-J3 Quantity 1000 pcs Taping Shipping Container
REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Page 6 of 6
1.7
1.3 0.15
7.8 6.6
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Colophon .7.2

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